Chang, Ruey-Dar received the B.S. degree in materials engineering from National Cheng Kung University, Tainan Taiwan, the M.S. degree from the Institute of Electronics, National Chiao Tung Uniersity, Hsinchu Taiwan, and Ph.D. degree in electrical engineering from the University of Texas at Austin in 1988, 1990, and 1998, respectively.
From 1990 to 1994, he was with the Electronics Research and Service Organization/Industrial Technology Research Institute (ERSO/ITRI – 工研院電子所), Hsinchu, where he was engaged in the development of process simulation and DRAM devices under the Submicron Project (次微米計畫).In 1994, he joined the Vanguard International Semiconductor Corporation (世界先進積體電路), Hsinchu, where he was responsible for DRAM device design and TCAD.
Since 1998, he has been with the Department of Electronics Engineering, Chang Gung University (長庚大學), Taoyuan, Taiwan, where he is an Associate Professor. He currently works on CMOS process modeling, doping profile characterization, TFT technology modeling and power devices.